CAIQIN

• High Thermal Conductivity: Thermal conductivity reaches 180-290 W/m·K, far superior to standard aluminum substrates (1-3 W/m·K). It rapidly dissipates heat from chips, lowers device operating temperatures, and enhances long-term reliability.
• Precise Thermal Matching: The Coefficient of Thermal Expansion (CTE) can be adjusted to 6.5-9.5×10⁻⁶/K by varying the SiC content. This matches well with Si chips (~2.6 ppm/°C) and ceramic substrates, reducing thermal stress and preventing solder joint failure or substrate cracking.
• Lightweight and High Strength: With a density of approximately 2.95 g/cm³, it is only one-third that of copper and close to pure aluminum. Its specific stiffness is 3 times that of aluminum and 25 times that of copper. It offers better vibration resistance than ceramics, making it ideal for automotive and aerospace applications where weight reduction and vibration resistance are critical.
• High Reliability and Environmental Resistance: Features high mechanical strength and stiffness, wear and corrosion resistance, and good electromagnetic shielding. It is suitable for long-term stable operation in high-power, high-frequency, and harsh working conditions.
• Design Flexibility and Ease of Processing: Properties are customizable. It supports EDM (Electrical Discharge Machining) and diamond machining, and can be plated with Nickel, Gold, or Tin, making it compatible with mass production and packaging processes.
• Cost and Substitution Advantages: Offers comprehensive performance superior to Cu/W and Kovar alloys. It provides significant weight reduction (e.g., 10kg reduction in radar systems) and lower long-term usage costs, making it suitable for high-power electronics, 5G base stations, and automotive IGBTs.

Advantages:

• Ultimate Biocompatibility and Cleanliness

  Made from high-purity alumina or zirconia ceramics, the surface is smooth and dense, preventing the adhesion of drug residues, blood components, or bacteria, and complying with GMP cleanliness standards in the medical field. The ceramic material poses no risk of metal ion leaching, avoiding contamination of drug solutions and irritation to human tissues, making it particularly suitable for sensitive scenarios involving blood contact or long-term infusion. Additionally, the smooth surface facilitates high-temperature steam sterilization or chemical disinfection, allowing for repeated use without microbial growth, thereby ensuring hygiene safety in medical procedures.

• High Precision and Wide Range Adaptability

  The flow field rectification effect of the porous symmetric structure enables a measurement accuracy of ±0.5% and a repeatability error of ≤±0.2%, accurately capturing minute flow changes in medical liquids (such as micro-infusion scenarios of 70~4000 nl/min). The turndown ratio can reach 10:1 and can be extended to 30:1 through segmented compensation technology. This meets both routine drug infusion monitoring and high-precision micro-dosing needs in intensive care, allowing a single device to serve multiple scenarios.

• Corrosion Resistance and Structural Stability

  Ceramic materials offer excellent chemical corrosion resistance. Except for hydrofluoric acid, they can withstand various medical fluids (such as acidic/alkaline drugs, chemotherapy agents) and disinfectants without aging, corrosion, or damage over long-term use. With a hardness exceeding HRA85 (second only to diamond), they resist erosion and wear from fluids containing microscopic particles (such as blood products and suspensions). Their service life far exceeds that of traditional metal or rubber flow meters, reducing maintenance and replacement costs for medical equipment.

• Low Damage and Low Energy Consumption, Suitable for Sensitive Medical Fluids

  The through-hole array design of the porous ceramic throttle component results in low pressure loss (pressure drop ≤0.05 MPa) during fluid flow. This prevents shear damage to sensitive medical fluids (such as blood and biological preparations), avoiding the destruction of cell activity or active drug ingredients. Meanwhile, the low-energy design accommodates the low-power supply requirements of medical devices, making it especially suitable for portable medical infusion equipment.

• Easy Installation, Adaptable to Compact Medical Equipment

  The porous structure optimizes flow field characteristics, significantly shortening the required straight pipe sections before and after the flow meter (upstream ≥5D, downstream ≥3D, where D is the pipe inner diameter). Compared to traditional flow meters (upstream ≥10D, downstream ≥5D), this saves installation space and allows for flexible integration into compact medical devices (such as hemodialysis machines and micro-infusion pumps), reducing the overall design complexity of the equipment.

• Stable Signal and Strong Anti-Interference Capability

  The porous structure effectively suppresses eddy currents and flow field disturbances, resulting in a more stable differential pressure signal and a significantly improved signal-to-noise ratio. It can resist high-frequency electromagnetic interference in medical environments (such as interference from electrosurgical units and monitors in operating rooms), ensuring the accuracy and continuity of flow measurement data and providing a reliable basis for precise control in medical operations.

Advantages:

• Ultimate Thermal Conductivity and Outstanding Thermal Management

  The composite material achieves a thermal conductivity of 200~350 W/(m·K), significantly superior to Aluminum Silicon Carbide (AlSiC) (180~290 W/(m·K)). This enables rapid heat dissipation from high-power devices (such as IGBTs and laser components), effectively lowering junction temperatures, enhancing operational stability, and extending service life. It is particularly well-suited for high power density scenarios like 5G base stations and new energy vehicle power modules.

• Excellent Electrical Conductivity for Conductive/EMC Requirements

  Copper is a premium conductive material (pure copper conductivity is approx. 5.96×10⁷ S/m). Although the electrical conductivity of Copper-Silicon Carbide (Cu/SiC) composites is slightly lower than pure copper due to the insulating SiC phase, it effectively meets scenarios requiring both "thermal conduction + electrical conductivity" (such as electronic packaging substrates and power semiconductor electrodes). Compared to insulating ceramic substrates, it allows for direct electrical connections without additional metallization layers, simplifying device structure.

• Low Coefficient of Thermal Expansion (CTE) and Excellent Thermal Matching

  By adjusting the volume fraction of Silicon Carbide (typically 30%~60%), the Linear Coefficient of Thermal Expansion (CTE) of Cu/SiC composites can be precisely controlled to 6~12×10⁻⁶/°C. This ensures good thermal matching with device materials like silicon chips (2.6×10⁻⁶/°C) and Aluminum Nitride (AlN) ceramics (4.5~5.5×10⁻⁶/°C). It significantly reduces thermal stress during temperature cycling, preventing issues such as solder layer cracking and substrate deformation, thereby enhancing packaging reliability.

• Balanced Mechanical Properties and Strong Structural Stability

  The addition of the Silicon Carbide reinforcement phase significantly improves the strength and hardness of the copper matrix. Cu/SiC composites achieve a tensile strength of 300~500 MPa, with hardness 2~3 times that of pure copper, offering excellent wear and deformation resistance. Unlike pure copper, which is prone to softening and deformation, Cu/SiC maintains stable mechanical properties under high-temperature conditions (200~300°C), meeting the structural support needs of precision electronic components.

• Relatively Lightweight, Balancing Performance and Weight Reduction

  Although its density (4.5~5.5 g/cm³) is higher than AlSiC (3.0~3.2 g/cm³), it is significantly lower than traditional heavy metal heat dissipation materials (such as Mo-Cu or W-Cu, with densities of approx. 8~10 g/cm³). This achieves lightweighting while ensuring thermal and electrical performance, helping to reduce the overall weight of high-end equipment such as aerospace electronics and precision instruments.

Advantages:

• Efficient Heat Dissipation and Lower Junction Temperature: With a thermal conductivity of 170-240 W/m·K, significantly higher than traditional alumina ceramic substrates (20-30 W/m·K), it rapidly dissipates concentrated heat generated during IGBT chip operation. This reduces the chip junction temperature by 15-30°C, directly enhancing the power density and overload capability of the IGBT.
• Precise Thermal Expansion Matching to Eliminate Failure Risks: The Coefficient of Thermal Expansion (CTE) can be adjusted to 6.5-9.5×10⁻⁶/K, minimizing the CTE difference with silicon chips (2.6×10⁻⁶/K) and Aluminum Nitride ceramics (4.5×10⁻⁶/K). This significantly reduces thermal stress during temperature cycling, preventing failure issues such as solder layer fatigue cracking and substrate warping, thereby increasing the cycle life of IGBT modules by 3-5 times.
• Superior Match with Chips Compared to Traditional Aluminum Alloys: Offers a lower coefficient of thermal expansion than traditional aluminum alloy materials, providing better compatibility and matching with semiconductor chips.
• Lightweight and High Strength for Harsh Conditions: With a density of approximately 2.95 g/cm³, it is only one-fifth that of Copper-Tungsten (Cu/W) substrates, significantly reducing the weight of IGBT components in automotive and aerospace applications. Its specific stiffness is three times that of pure aluminum, offering excellent vibration and shock resistance, making it suitable for harsh working environments such as the bumps and extreme temperature variations encountered in new energy vehicles.
• Process Compatibility for Integrated Packaging: Supports EDM (Electrical Discharge Machining) and precision grinding. The surface can be plated with metal layers such as Nickel, Gold, or Tin, ensuring full compatibility with IGBT packaging processes like soldering and wire bonding. Additionally, it provides good electromagnetic shielding, meeting the integrated and miniaturized design requirements of high-power IGBT modules.